The study investigates the electronic transport properties of two junctions (BGB, GBG) composed of borophene (B) and graphene (G). Employing the transfer matrix method with Chebyshev polynomials, we examined single and multiple barriers within a superlattice configuration. We demonstrated that a single barrier displays remarkable tilted transport properties, with perfect transmission observed for both junctions under normal incidence. Robust superlattice transmission is maintained, particularly in the BGB junction, when multiple barriers are introduced.
By varying the incident energy, numerous transmission gaps in the transmission probability were observed. The number, width, and position of these gaps can be manipulated by adjusting the number of cells, incident angle, and barrier characteristics. Significant variations in conductance and the Fanofactor were observed for diffusive transport, underscoring the sensitivity of these junctions to physical parameters.
Distinct behaviors between BGB and GBG junctions were observed, particularly in response to changes in barrier height. In the case of ballistic transport, the minimum conductivity was found to correlate with the maximum Fano factor, showcasing their control under specific physical conditions. Analysis of the length ratio (geometric factor) revealed intriguing patterns, with conductivity and the Fanofactor converging to specific values as the ratio approached infinity.
The study focuses on the electrical transport properties of junctions composed of alternating layers of borophene (B) and graphene (G), known as BGB or GBG structures. Using mathematical techniques such as the transfer matrix method with Chebyshev polynomials, the researchers investigated electron transport across these junctions, particularly when encountering barriers within a superlattice configuration.
They discovered that electrons can pass through a single barrier without resistance under normal incidence, demonstrating perfect transmission. Multiple barriers within the superlattice, especially in the BGB structure, exhibited robust electron transmission.
The researchers found that by varying the electron energy, they could manipulate the appearance of transmission gaps—empty spaces where electrons cannot pass through—in the electron flow. These gaps' number, width, and position can be controlled by adjusting the junction setup, such as incident angle or barrier characteristics.
The study also explored electron behavior under diffusive transport (scattered movement) versus ballistic transport (straight-line movement) and observed significant variations in electrical conductance and the Fano factor (a measure of electron flow variability) based on physical parameters.
Differences in conductance and the Fano factor between BGB and GBG junctions were noted, particularly with changing barrier height. The study demonstrated a correlation between minimum electrical conductance and maximum Fano factor under specific physical conditions.
Finally, the researchers analyzed how changing the length ratio of the junctions affected electron flow, observing specific settling patterns of conductance and the Fano factor as the length ratio increased.
Overall, this research aims to understand and control electron transport in these layered structures, which could have implications for developing novel electronic devices.
